Simplified Analysis of Non-equilibrium Semiconductor Space Charge Regions Using a Zero-current Approxi~~tion

An explicit zero-current approximation is introduced to derive simple onedimensional expressions for the semiconductor potential, electric field and carrier concentrations in a non-equilibrium MIS structure which include the effect of the potential drop across the minority carrier inversion layer. The expressions are an alternative to more refined but complex models of semiconductor space-charge regions in which a current flows. The zero-current ap~roximation is particularly useful for high capacitance thin insulator MIS structures. 1Member, IEEE. E.R. Fossum was with the Department of Electrical Engineering, Yale University, New Haven, CT. He will be with the Department of Electrical Engineering, Columbia University in the City of New York, NY 10027. 2Fellow, IEEE. R.C. Barker is with the Department of Electrical Engineering, Yale University, New Haven, CT 06520.